Vous êtes ici : Accueil > PRESSE > CEA-Leti Develops CMOS-Compatible 200mm Process Technology Close to State-of-the-Art GaN/SiC Performance at Lower Cost

Press release | News | New technologies

CEA-Leti Develops CMOS-Compatible 200mm Process Technology Close to State-of-the-Art GaN/SiC Performance at Lower Cost


​​​​​​​​​​Technology for 5G & 6G infrastructure, satcom, radar for UAV detection
and other applications uses existing cleanrooms with larger substrates

Published on 15 December 2023

CEA-Leti has developed a 200mm gallium nitride/silicon (GaN/Si) process technology compatible with CMOS cleanrooms that preserves the high performance of the semiconductor material and costs less than existing GaN/SiC technology. ​


In one of nine presentations at IEDM 2023, the institute said that current GaN high-electron-mobility-transistor (HEMT) technologies used in telecom or radar applications come on small GaN/SiC substrates and require processing in dedicated cleanrooms. ​


The high-performance SiC substrates used to grow GaN layers are very expensive and available only in relatively small size. This R&D project developed GaN/silicon technology (GaN/Si) on 200mm and later for 300mm wafer diameters in CMOS-compatible cleanrooms to reduce substrate cost and benefit from existing high-performance cleanroom facilities.​​


As a result, CEA-Leti’s GaN/Si technology performance at 28 GHz is gaining ground on GaN/SiC technology in terms of power density.​


“Our goal was to reach existing state-of-the-art GaN HEMT performance at ~30 GHz with a 200mm CMOS- compatible GaN/Si technology and to compete with GaN/SiC technology,” said Erwan Morvan, CEA-Leti scientist and lead author of the paper, "6.6W/mm 200mm CMOS Compatible AlN/GaN/Si MIS-HEMT with In-Situ SiN Gate Dielectric and Low Temperature Ohmic Contacts”.
“This work demonstrates that CMOS-compatible 200mm SiN/AlN/GaN HEMT on silicon technology is a promising candidate for applications like 5G/6G infrastructure, satcom, radar for UAV detection or earth observation. It should enable less expensive devices while keeping high power density, high efficiency, light weight and compactness," he said.

​​​

The devices developed in this work, which are designed for RF amplifiers and switches, can be used in those applications around 30 GHz.​


While reliability testing on the process technology is just beginning, CEA-Leti’s ongoing R&D in this area will include increasing the raw output power and efficiency of its MIS-HEMT transistors, integrating its improved process modules to boost device performance & increase operation frequency toward 100+ GHz, and 3D integration of GaN/Si chips on 300mm Si wafers.​

Figure 1.pngFigure 2.png

Scanning transmission electron microscopy cross-section of the AlN/GaN MIS-HEMT and zoom on the gate foot​

Top page